Hybrid molds for molten solder screening process

ABSTRACT

Hybrid molds for molding a multiplicity of solder balls for use in a molten solder screening process and methods for preparing such molds are disclosed. A method for forming the multiplicity of cavities in a pyramidal shape by anisotropically etching a crystalline silicon substrate along a specific crystallographic plane is utilized to form a crystalline silicon face plate used in the present invention hybrid mold. In a preferred embodiment, a silicon face plate is bonded to a borosilicate glass backing plate by adhesive means in a method that ensures coplanarity is achieved between the top surfaces of the silicon face plate and the glass backing plate. In an alternate embodiment, an additional glass frame is used for bonding a silicon face plate to a glass backing plate, again with ensured coplanarity between the top surfaces of the silicon face plate and the glass frame. In a second alternate embodiment, a silicon face plate is encased in an extender material which may be borosilicate glass or a polymer. The encasing is performed on a leveling fixture such that the top surface of the silicon face plate and the top surface of the extender material after solidification are perfectly leveled.

FIELD OF THE INVENTION

The present invention generally relates to hybrid molds for use in amolten solder screening process for molding solder bumps and methods forpreparing such molds and more particularly, relates to hybrid molds formolding a multiplicity of solder balls which are constructed by acrystalline silicon face plate provided with a multiplicity of cavitiesformed in a front surface and a rigid backing plate which hassubstantially the same coefficient of thermal expansion as crystallinesilicon for bonding to a back surface of the face plate and methods forpreparing such hybrid molds.

BACKGROUND OF THE INVENTION

In modern semiconductor devices, the ever increasing device density anddecreasing device dimensions demand more stringent requirements in thepackaging or interconnecting techniques of such devices. Conventionally,a flip-chip attachment method has been used in the packaging of ICchips. In the flip-chip attachment method, instead of attaching an ICdie to a lead frame in a package, an array of solder balls is formed onthe surface of the die. The formation of the solder balls is normallycarried out by an evaporation method of lead and tin through a mask forproducing the desired solder balls. More recently, the technique ofelectro-deposition has been used to produce solder balls in flip-chippackaging.

Other solder ball formation techniques that are capable ofsolder-bumping a variety of substrates have also been proposed. Thesetechniques work fairly well in bumping semiconductor substrates thatcontain solder structures over a minimum size. One of the more popularlyused techniques is a solder paste screening technique which can be usedto cover the entire area of an 8 inch wafer. However, with the recenttrend in the miniaturization of device dimensions and the reduction inbump-to-bump spacing (or pitch), the solder paste screening techniquebecomes impractical. For instance, one of the problems in applyingsolder paste screening technique to modern IC devices is the pastecomposition itself. A paste is generally composed of a flux and solderalloy particles. The consistency and uniformity of the solder pastecomposition become more difficult to control with a decreasing solderbump volume. A possible solution for this problem is the utilization ofsolder pastes that contain extremely small and uniform solder particles.However, this can only be done at a high cost penalty. Another problemin using the solder paste screening technique in modern high densitydevices is the reduced pitch between bumps. Since there is a largereduction in volume from a screened paste to the resulting solder bump,the screen holes must be significantly larger in diameter than the finalbumps. The stringent dimensional control of the bumps makes the solderpaste screening technique impractical for applications in high densitydevices.

A more recently developed injection molded solder (IMS) techniqueattempted to solve these problems by dispensing molten solder instead ofsolder paste. However, problems have been observed when the technique isimplemented to wafer-sized substrates. U.S. Pat. No. 5,244,143,discloses the injection molded solder technique and is herebyincorporated by reference in its entirety. One of the advantages of theIMS technique is that there is very little volume change between themolten solder and the resulting solder bump. The IMS technique utilizesa two inch wide head that fills boro-silicate glass molds that are wideenough to cover most single chip modules. A narrow wiper provided behindthe solder slot passes the filled holes once to remove excess solder.The IMS method for solder bonding is then carried out by applying amolten solder to a substrate in a transfer process. When smallersubstrates, i.e., chip scale or single chip modules (SCM's) areencountered, the transfer step is readily accomplished since thesolder-filled mold and substrate are relatively small in area and thuscan be easily aligned and joined in a number of configurations. Forinstance, the process of split-optic alignment is frequently used injoining chips to substrates. The same process may also be used to join achip-scale IMS mold to a substrate (chip) which will be bumped.

A more recently developed method that does not have the limitations ofthe solder paste screening technique of significant volume reductionsbetween the initial paste and the final solder volume is the moltensolder screening (MSS) method. In the MSS method, pure molten solder isdispensed. When the MSS solder-bumping method is used on largesubstrates such as 8 inch or 12 inch wafers, surface tension alone isinsufficient to maintain intimate contact between a mold and asubstrate. In order to facilitate the required abutting contact overlarge surface areas, a new method and apparatus for maintaining such aretherefore necessary.

For instance, in a co-pending application of Ser. No. 09/070,121commonly assigned to the Assignee of the present application and ishereby incorporated by reference in its entirety, a method for formingsolder bumps by a MSS technique that does not have the drawbacks orshortcomings of the conventional solder bumping techniques has beenproposed. In the method, a flexible die member is used in combinationwith a pressure means to enable the die member to intimately engage amold surface and thus filling the mold cavities and forming the solderbumps. The flexible die head also serves the function of a wiper byusing a trailing edge for removing excess molten solder from the surfaceof the mold.

The MSS process can be carried out by first filling a multiplicity ofcavities in the surface of a mold with molten solder. This isaccomplished by first providing a stream of molten solder and thenpassing a multiplicity of cavities in the mold surface in contact withthe surface of the stream while adjusting a contact force such that themolten solder exerts a pressure against the surface of the mold to fillthe cavities with solder and to remove excess solder from the surface ofthe mold. The stream of molten solder is supplied through a die headconstructed of a flexible metal sheet that is capable of flexing atleast 0.0015″ per inch of the die length. The solder has a compositionbetween about 58% tin/42% lead and about 68% tin/32% lead. Themultiplicity of cavities each has a depth-to-width aspect ratio ofbetween about 1:1 and about 1:10. The mold body is made of a materialthat has a coefficient of thermal expansion substantially similar tothat of silicon or the final solder receiving material. The contactbetween the multiplicity of cavities and the surface of the moltensolder stream can be adjusted by a pressure means exerted on theflexible die.

Referring now to FIG. 1A, wherein a flexible die head 10 for formingsolder bumps by a molten solder screening process is shown. The die head10 has a die body 12 which is made of a thin, flexible metal sheet suchas stainless steel or any other suitable material that is non-wetting tosolder. The die body 12 has a gate opening 14 and a slot opening 16. Thegate opening 14 has a narrow width and is generally positioned at thecenter of the die body 12. The gate opening 14 provides fluidcommunication between a front side 18 and a back side 22 of the die body12. The gate opening 14 further provides a passageway for receiving amolten solder 24 stored in a solder reservoir 26. The molten solder 24is kept under an inert gas atmosphere at a pressure of approximately 5psi. A suitable inert gas used is nitrogen, i.e., as shown in FIG. 1A,supplied by a nitrogen source 28. The functions of the inert gas in thesolder reservoir are two fold. First, it provides an inert gas blanketover the solder 24 such that any oxidation of the molten solder 24 canbe avoided. Secondly, the nitrogen blanket in the reservoir 26 providesa positive pressure such that molten solder 24 flows easily through thegate opening 14 into the slot opening 16. In continuous operation, thenitrogen pressure is turned off when flexible die head 10 moves betweenmolds to prevent solder loss. The slot opening 16 is provided in thefront surface 18 of the die body 12 in a suitable depth such that moltensolder 24 can easily flown into the mold cavities 32 (shown in FIG. 2).The width of the slot opening 16 is predetermined such that it coverssubstantially all the cavities 32, 38 in the mold surface 42. Theopening 16 is also wide enough to cover the entire width of a wafersurface to be later bumped by first filling a mold surface having thesame width.

The die body 12 also functions as a high temperature squeegee whichseparates the molten solder in the slot opening 16 from the moltensolder filled in the mold cavities 32 (FIG. 2). In order to accomplishthis task, the die body 12 must be positioned closely behind a moltensolder flow front when the flow front completely covers a linear areaacross the mold surface 42. The aspect ratio (the depth-to-width ratio)of the mold cavities 32 are typically 0.5 so that solder flows easilyinto and penetrates to the bottom of the cavity. It has been noted that,at this point, it is critical to “cut” or “sever” the molten solder asthe mold plate 34 scans over the molten solder flow. This difficult taskis accomplished by the flexible die body 12 in a unique manner since thetrailing edge 36 of the die body 12 functions as a flexible wiper, orsqueegee, to continuously scrape the surface 42 of the mold plate 34.FIG. 1B illustrates a bottom view of the flexible die head 10 shown inFIG. 1A. The trailing edge 36 of the die body 12 therefore effectively“cuts” the solder supply 24 from the molten solder that has already beendeposited in the mold cavities 32. The trailing edge 36, should besufficiently smooth to assure a uniform contact across theoptically-smooth mold surface 42. It is another unique feature that thetrailing edge 36, or the wiper, of the die body 12 is flexible only on aglobal scale, i.e. on a scale of the width of the mold plate 34. As aresult, the trailing edge 36 does not enter into cavities 32 and damagethe solder bumps formed in the cavities. The word “flexibility” used inthe context of the application is on the scale of inches, while the word“rigidity” used in the context is on the scale of thousandths of an inchor mils.

As shown in FIG. 2, the flexible die body 12 scans smoothly over thesurface 42 of the mold plate 34, i.e., over the top of all the cavities32 allowing the solder within the cavities to stay while removing excesssolder from the surface 42. This operation continues as the mold plate34 is scanned over the molten solder supply 24 until all the cavitiesare filled. As shown in FIG. 2, the cavities 38 not yet scanned over diebody 12 are still empty. The method only requires the die body 12 topass over the mold plate 34 once for a complete fill. The novel processtherefore eliminates solder streaking and non-uniform fill problemscaused by multiple scannings with overlapped areas encountered inconventional methods.

The MSS method is therefore a new technique for solder bumping large 8inch or even 12 inch silicon wafers. As previously described, thetechnique basically involves filling cavities in wafer-sized mold plateswith molten solder, solidifying the solder and then transferring thesolder in these cavities to the wafer. The transfer process requiresaligning the cavities in a mold plate to the solder receiving pads on asilicon wafer and then heating the assembly to a solder reflowtemperature. This results in the molten solder to metallurgically bondto the metallized pads on the wafer and thus assuring the solder in eachcavity to transfer from the mold plate to the wafer. Since varioussolder alloys are readily processed with the MSS technique, the moldplate and wafer assembly must remain aligned throughout the reflowprocess. Since the contact area between mold plate and wafer covers anentire 8 inch or 12 inch silicon wafer, it is important that thesematerials match very closely in coefficient of thermal expansion (CTE),for instance, when the mold plate is fabricated of a borosilicate glass.

In another copending application assigned to the common assignee of thepresent invention, Ser. No. 09/109,396, a process for etching a glassmold plate is disclosed for producing the desired cavities in a mold forreceiving molten solder. However, since glass is an amorphous material,processing parameters which control the isotropic etching must becarefully monitored to produce the desired cavity volumes. Even whensuch control is possible, the resulting cavity has a flat bottom withcurved sidewalls which allows the reflowed solder ball certain degree oflateral movement before bonding to the solder receiving pad on a waferor any other electronic substrates. It is desirable to eliminate anypossibility of such lateral movement such that highest accuracy of balllocation during the reflow process can be maintained.

It is therefore desirable to provide cavities for solder balls that arenot hemispherical in shape such that the location of the solder ball canbe controlled more accurately. Since the substrate that typicallyreceives solder bumps is an 8 inch round silicon wafer, thecorresponding hole pattern in the mold plate is also circular. It isknown that the MSS head has a solder slot which is slightly greater thanthe diameter of the circular hole pattern, i.e., about 8 inches, thus arun-on and run-off area is required at the beginning and at the end ofthe scan length. For instance, this is so when the mold is a 10″×10″square borosilicate glass plate which has an 8 inch circular holepattern etched therein. However, when the mold plate is made of an 8inch anistropically etched <100> silicon wafer, there is no run-on orrun-off area, since the wafer diameter is only slightly larger than thecircular hole pattern area. Thus, there is a need to square-off a roundsilicon wafer mold plate to provide the peripheral area needed by a MSSsolder head. Even though it is possible to take a larger 12 inch round<100> silicon wafer and etch a central 8 inch area to produce the holepattern to bump an 8 inch silicon wafer, it is undesirable for severalreasons. First, since silicon wafers are crystalline material, they aresensitive to defects in the crystal which may initiate and propagatecracks. Secondly, since the MSS process subjects the <100> silicon moldplate to mechanical stress, standard ratios of waferdiameter-to-thickness would be insufficient to prevent possible fatiguecracking. Furthermore, if the wafer to be bumped was 12 inch indiameter, then an even larger, i.e., 16 inch diameter mold plate waferwould be required. As a consequence, the largest manufactured siliconwafer could not be bumped by a silicon-only mold plate.

It is therefore an object of the present invention to provide a hybridmold for molding a multiplicity of solder balls that does not have thedrawbacks or shortcomings of the conventional molds.

It is another object of the present invention to provide a hybrid moldfor molding a multiplicity of solder balls that consists of acrystalline silicon face plate and a backing plate bonded to the faceplate.

It is a further object of the present invention to provide hybrid moldfor molding a multiplicity of solder balls wherein a crystalline siliconface plate is utilized by etching in its surface along acrystallographic orientation a multiplicity of cavities.

It is another further object of the present invention to provide ahybrid mold for molding a multiplicity of solder balls wherein amultiplicity of cavities are formed in a front surface of a crystallinesilicon face plate with each of the cavities being a pyramidal shape.

It is still another object of the present invention to provide a hybridmold for molding a multiplicity of solder balls wherein a crystallinesilicon face plate and a backing plate made of a material having arigidity and a coefficient of thermal expansion substantially similar tothat of the crystalline silicon are used.

It is yet another object of the present invention to provide a hybridmold for a multiplicity of solder balls by etching a multiplicity ofcavities in a crystalline material in an anisotropic etching processthus eliminating the need for the careful monitoring of processingparameters since the crystallographic nature of the crystalline materialdetermines the etching geometries.

It is still another further object of the present invention to provide ahybrid mold for a multiplicity of solder balls by bonding a crystallinesilicon face plate to a borosilicate glass backing plate by an adhesivemeans.

It is yet another further object of the present invention to provide ahybrid mold for a multiplicity of solder balls by bonding a crystallinesilicon face plate to a borosilicate glass backing plate such that thecrystalline silicon face plate has a coefficient of thermal expansionsubstantially similar to that for the electronic substrate onto whichthe multiplicity of solder balls are transferred.

It is still another further object of the present invention to provide ahybrid mold for a multiplicity of solder balls by bonding a crystallinesilicon face plate that has a multiplicity of cavities formed in a frontsurface to a borosilicate glass backing plate such that the frontsurface of the face plate and a top surface of the backing plate arecoplanar.

SUMMARY OF THE INVENTION

In accordance with the present invention, a hybrid mold for amultiplicity of solder balls and a method for preparing such hybrid moldare disclosed.

In a preferred embodiment, a hybrid mold for a multiplicity of solderballs is provided which includes a crystalline silicon face plate thathas a multiplicity of cavities formed in a front surface and a backingplate bonded to a back surface of the face plate. The multiplicity ofcavities in the front surface of the crystalline silicon face plate isformed along a crystallographic orientation, such as <100>. Each of themultiplicity of cavities may have a pyramidal shape. The mold can beused to transfer solder balls to an electronic substrate in a moltensolder screening process.

The backing plate of the hybrid mold may have a rigidity that issubstantially similar to that of the crystalline silicon. The backingplate may further have a coefficient of thermal expansion substantiallysimilar to that of the crystalline silicon, i.e., a coefficient ofthermal expansion within 50% of that for the crystalline silicon. Thebacking plate may be formed of a ceramic such as glass. The backingplate may be formed of borosilicate glass. The backing plate of thehybrid mold may further be formed of a polymer which has a rigiditysimilar to that for the crystalline silicon. The backing plate may bebonded to the face plate by adhesive means, or by a thermal ionic means,such as Mallory® bonding. The backing plate may also be formed bycasting a molten glass around the face plate or by casting a flowablepolymer around the face plate. The backing plate may further be bondedto the face plate by a polymeric based adhesive. The crystalline siliconface plate has a coefficient of thermal expansion that is substantiallysimilar to that for the electronic substrate onto which the multiplicityof solder balls are transferred.

The present invention is further directed to a hybrid mold for amultiplicity of solder balls that includes a crystalline silicon faceplate which has a substantially parallel front surface and back surface,a multiplicity of cavities for forming solder in the front surface ofthe face plate, and a backing plate which has a top surface and a bottomsurface, the top surface has a recess formed therein for receiving theface plate by adhesive means such that the front surface of the faceplate and the top surface of the backing plate are substantiallycoplanar.

The multiplicity of cavities for forming solder balls in the hybrid moldare formed along a preselected crystallographic orientation, such as anorientation of <100>. Each of the multiplicity of cavities may have apyramidal shape. The recess in the top surface of the backing plate hasan area and a depth sufficiently large for receiving the face plate suchthat the front surface of the face plate and the top surface of thebacking plate are coplanar when the face plate is bonded to the recessby an adhesive layer. The backing plate may be formed of a material thathas a rigidity and coefficient of thermal expansion substantiallysimilar to those for crystalline silicon. The backing plate may beformed of borosilicate glass.

The present invention is further directed to a hybrid mold for amultiplicity of solder balls that includes a crystalline silicon faceplate which has a first diameter and a multiplicity of cavities formedin a front surface, a backing plate which has a top surface bonded to aback surface of the face plate, the backing plate has a length and awidth larger than the first diameter of the face plate, a frame memberwhich has substantially the same length and width as the backing plateand an aperture having a second diameter larger than the first diameterof the face plate, and an adhesive circumferentially bonding the framemember to the face plate such that a top surface of the frame member iscoplanar with the front surface of the face plate.

The hybrid mold may further include an adhesive layer between a bottomsurface of the frame member and a top surface of the backing plate. Theframe member and the backing plate may be formed substantially of thesame material. The frame member and the backing plate may be formed of amaterial that has a rigidity substantially similar to that ofcrystalline silicon. The frame member and the backing plate may beformed of a material which has a coefficient of thermal expansion within50% of that for the crystalline silicon. A thermal ionic bond may existbetween the top surface of the backing plate and the back surface of theface plate. The multiplicity of cavities are formed in the crystallinesilicon along a crystallographic orientation of <100>. Each of themultiplicity of cavities in the hybrid mold may be formed in a pyramidalshape.

The present invention is still further directed to a hybrid mold for amultiplicity of solder balls which consists of a crystalline siliconface plate having a multiplicity of cavities formed in a front surface,and a backing plate encasing the face plate with the front surface ofthe face plate exposed and a top surface of the backing plate beingsubstantially coplanar with the front surface of the face plate.

The backing plate of the hybrid mold may be formed of a material thathas a rigidity and a coefficient of thermal expansion substantiallysimilar to those of the crystalline silicon. The multiplicity ofcavities may be formed in the crystalline silicon along acrystallographic orientation of <100>. The backing plate of the hybridmold may be formed of borosilicate glass or of a polymeric material.

The present invention is still further directed to a method forpreparing a hybrid mold for a multiplicity of solder balls which can becarried out by the operating steps of first providing a crystallinesilicon face plate that has a multiplicity of cavities formed in a frontsurface, and then bonding a backing plate to a back surface of the faceplate.

The method may further include the step of forming a multiplicity ofcavities in the front surface of the crystalline silicon plate along acrystallographic orientation of <100>. Each of the multiplicity ofcavities may be formed in a pyramidal shape. The method may furtherinclude the step of transferring a multiplicity of solder balls to anelectronic substrate in a molten solder screening process. The methodmay further include the step of forming the backing plate with amaterial which has a rigidity or coefficient of thermal expansionsubstantially similar to that of the crystalline silicon.

The method for preparing a hybrid mold may further include the step offorming the backing plate with a ceramic or a glass, bonding the backingplate to a back surface of a face plate by adhesive means, or bondingthe backing plate to the back surface of the face plate by a thermalionic means. The method may further include the step of forming thebacking plate by casting a molten glass or a flowable polymer around theface plate. The method may further include the step of bonding thebacking plate to the face plate by a polymeric based adhesive.

The present invention is further directed to a method for preparing ahybrid mold for a multiplicity of solder balls by the operating steps offirst providing a crystalline silicon face plate which has asubstantially parallel front surface and back surface, then etching amultiplicity of cavities for forming solder balls in the front surfaceof the face plate, then providing a backing plate which has a topsurface and a bottom surface, the top surface has a recess formedtherein, and bonding the back surface of the face plate into the recesssuch that the front surface of the face plate and the top surface of thebacking plate are substantially coplanar.

The method for preparing a hybrid mold may further include the step offorming the multiplicity of cavities in the front surface of the faceplate along a preselected crystallographic orientation of <100>. Themethod may further include the step of etching each of the multiplicityof cavities in a pyramidal shape, providing the recess in the topsurface of the backing plate with an area and a depth sufficient forreceiving the face plate, and forming the backing plate with a materialthat has a rigidity and coefficient of thermal expansion substantiallysimilar to those of crystalline silicon. The method may further includethe step of forming the backing plate with borosilicate glass.

The present invention is still further directed to a method forpreparing a hybrid mold for a multiplicity of solder balls by the stepsof first providing a crystalline silicon face plate that has a firstdiameter and a multiplicity of cavities formed in a front surface, thenproviding a backing plate which has a top surface bonded to a backsurface of the face plate, the backing plate has a length and a widthlarger than the first diameter of the face plate, then providing a framemember which has substantially the same length and width as the backingplate and an aperture with a second diameter larger than the firstdiameter of the face plate, and bonding an outer peripheral surface ofthe face plate to an inner peripheral surface of the frame member by anadhesive means such that a top surface of the frame member is coplanarwith the front surface of the face plate.

The method for preparing a hybrid mold may further include the step ofadhesively bonding a bottom surface of the frame member to a top surfaceof the backing plate, forming the frame member and the backing platewith substantially the same ceramic material, and forming the framemember and the backing plate with a material that has a rigidity andcoefficient of thermal expansion substantially similar to those ofcrystalline silicon.

The method for preparing a hybrid mold may further include the step offorming the frame member and the backing plate with a material that hasa coefficient of thermal expansion within 50% of that for thecrystalline silicon. The method may further include the step of bondingthe top surface of the backing plate and the back surface of the faceplate by a thermal ionic bonding method, etching a multiplicity ofcavities in the front surface of the crystalline silicon face platealong a crystallographic orientation of <100>, and etching each of themultiplicity of cavities in the front surface of the crystalline siliconface plate in a pyramidal shape.

The present invention is still further directed to a method forpreparing a hybrid mold for a multiplicity of solder balls which can becarried out by the operating steps of first providing a crystallinesilicon face plate with a front surface and a back surface, etching amultiplicity of cavities for the solder balls in the front surface, andencasing the face plate with a liquid material forming a backing platewherein the front surface of the face plate is exposed and the topsurface of the backing plate is substantially coplanar with the frontsurface of the face plate. The method may further include the step offorming the backing plate with a material that has a rigidity and acoefficient of thermal expansion after solidifying that aresubstantially similar to those for the crystalline silicon. The methodmay further include the step of etching each of the multiplicity ofcavities in the face plate along a crystallographic orientation of<100>. The method may further include the step of forming the backingplate with borosilicate glass or a polymeric material.

The present invention is still further directed to a method for moldinga multiplicity of solder balls in a hybrid mold which can be carried outby the operating steps of first providing a crystalline silicon faceplate that has a front surface and a back surface substantially parallelto each other, etching a multiplicity of cavities in the front surfaceof the face plate, bonding a backing plate to the back surface of theface surface, and then filling the multiplicity of cavities with amolten solder. The method may further include the step of etching themultiplicity of cavities in the crystalline silicon face plate along acrystallographic orientation of <100>.

BRIEF DESCRIPTION OF THE DRAWINGS

These and other objects, features and advantages of the presentinvention will become apparent from the following detailed descriptionand the appended drawings in which:

FIG. 1A is a schematic illustrating a side view of a flexible die headused in a molten solder screening process.

FIG. 1B is a schematic illustrating a bottom view of the flexible diehead of FIG. 1A.

FIG. 2 is a schematic illustrating a die head positioned over awafer-sized mold in a molten solder screening process.

FIG. 2A is a schematic illustrating an enlarged perspective view ofsolder balls situated in mold cavities after a solder reflow process.

FIG. 2B is a schematic illustrating a perspective view of the pyramidalshape of the cavities in the crystalline silicon mold.

FIG. 3 is a plane view of a present invention backing plate.

FIG. 3A is a side view of the backing plate of FIG. 3 in a one-piececonstruction.

FIG. 3B is a side view of the backing plate of FIG. 3 in a two-piececonstruction.

FIG. 4 is a plane view of the preferred embodiment of the presentinvention hybrid mold.

FIG. 4A is a cross-sectional view of the present invention preferredembodiment of FIG. 4 illustrating a crystalline silicon face plate and aborosilicate backing plate positioned on a leveling fixture.

FIG. 4B is a cross-sectional view of a completed hybrid mold in thepresent invention preferred embodiment wherein a polymeric adhesivebonds the face plate and the backing plate together.

FIG. 5 is a plane view of an alternate embodiment of the presentinvention.

FIG. 5A is a cross-sectional view of the alternate embodiment of FIG. 5illustrating a crystalline silicon face plate which is bonded to abacking plate and a frame member positioned on a leveling fixture.

FIG. 5B is a cross-sectional view of the present invention alternateembodiment hybrid mold of FIG. 5 after the face plate, the backing plateand the frame member are bonded together by an adhesive.

FIG. 6 is a cross-sectional view of a second alternate embodiment of thepresent invention illustrating a face plate, a frame member for castingand a leveling fixture.

FIG. 6A is a cross-sectional view of the second alternate embodiment ofthe present invention with an extender material filled into the framemember.

FIG. 6B is a cross-sectional view of the present invention secondalternate embodiment hybrid mold.

DETAILED DESCRIPTION OF THE PREFERRED AND ALTERNATE EMBODIMENTS

The present invention discloses a novel hybrid mold for molding amultiplicity of solder balls which is constructed by a face plate madeof a crystalline silicon and formed with a multiplicity of cavities ofpyramidal shape, and a backing plate that has a rigidity and coefficientof thermal expansion substantially similar to that of the crystallinesilicon. The present invention further discloses a method for preparingsuch hybrid molds in a preferred and two alternate embodiments. Thepresent invention hybrid molds can be used for any semiconductorprocesses which require the use of solder balls, but is particularlysuitable for use in a molten solder screening process for preparingsolder balls.

One of the novel features of the present invention is the use of acrystalline silicon face plate for forming the multiplicity of cavitiesalong a specific crystallographic orientation of the silicon. As aresult, a multiplicity of cavities each having a pyramidal shape can beformed along a crystallographic plane of <100> such that any lateralmovement of a solder ball in its cavity can be minimized or eliminated.The highest accuracy of solder ball location during a reflow process canthus be obtained. Furthermore, since the crystalline silicon isanisotropically etched to produce the multiplicity of cavities in afront surface, the need for careful monitoring of the processingparameters is eliminated due to the crystallographic nature of the bulkmaterial which determines the etching planes and affords a self-limitingprocess.

The present invention permits the making of a wafer-sized solder mold ofcrystalline silicon material by anisotropically etching the singlecrystal silicon wafer along a crystallographic orientation of <100>. Byusing this process, pyramidal shaped cavities are produced which assurethat upon reflow the solder balls stay on exact centers determined bythe apex of the pyramid. This is shown in FIGS. 2A and 2B. The pyramidalshape of the cavity (FIG. 2B) causes the reflowed solder ball toprotrude significantly above the mold plate surface (FIG. 2A). Thisconfiguration assures that the molten solder contacts the metalizedbonding pad on the wafer during the reflow process, since surfacetension in effect lifts the solder out of the cavity onto the pad. Asthe wafer is held in intimate contact with the mold plate during thereflow process, wetting of the solder to the pads takes place as soon asthe lifting process begins at the reflow temperature. Another novelfeature of the present invention method of anisotropically etching ofthe <100> silicon is that the method provides easy control of highprecision pyramidal mold cavities which are extremely uniform asrepetitive arrays across a silicon mold plate. This is accomplished dueto the fact that directional etch rates are controlled mainly by thevarious crystallographic planes of the bulk silicon material. Defectdensities are also significantly lower than in amorphous borosilicateglass.

Another novel feature of the present invention hybrid mold is the use ofthe crystalline silicon face plate for the hybrid mold since the siliconface plate is completely matched in CTE to a wafer silicon. This assuresthat there will be no shifting in alignment between the mold plate (thesilicon face plate) and the wafer when the assembly is elevated fromroom temperature to a solder reflow temperature.

Still another novel feature of the present invention hybrid moldutilizing a crystalline silicon face plate is the contrast providedbetween cavities that are empty and those that are filled with solder.Since silicon is a dark material and solder is a brightly reflectivemetal, a strong contrast is presented which is useful for inspecting themold to assure that all of the cavities have been filled with solderduring the MSS process. Since the present invention novel method enablesan effective transfer process of the solder balls, a 100% filled moldresults in a 100% bumped wafer.

Even though silicon is not transparent in the visible light spectron, itis transparent in the infra-red portion of the spectrum. Therefore, asolder filled silicon mold may be aligned to the wafer in the infra-redor by a commonly used split-optics alignment technique.

The present invention novel hybrid molds combined a crystalline siliconface plate with a backing plate or a glass frame thus forming a hybridmold fixture. In the following preferred and alternate embodiments, adesirable common feature is shared which matches the solder receiving orelectronic wafer diameter to the silicon face plate diameter. In effect,an 8 inch silicon face plate will bump an 8 inch silicon wafer, while a12 inch silicon face plate will bump a 12 inch silicon wafer.

Referring now to FIG. 3, wherein a plane view of a preferred embodimentof the present invention backing plate 40 is shown. The backing plate 40may be a 10″×10″ borosilicate glass plate in which a large circularcavity 44 has been produced and thus becoming a glass frame. This may beaccomplished by either taking a single glass plate and machining oretching a cavity to a depth slightly greater than the thickness of thesilicon face plate, or joining two flat glass plates with one of whichhas a central cavity 44 cut out and is slightly thicker than the siliconface plate. These are shown in FIGS. 3A and 3B. FIG. 3A shows a singlepiece construction, while FIG. 3B shows a two-piece construction of abase plate 46 and a glass frame 48 with a cavity 44.

The present invention preferred embodiment hybrid mold is further shownin FIGS. 4, 4A and 4B. As shown in FIG. 4, a plane view of the presentinvention hybrid mold 50 is shown with a backing plate 52, a crystallinesilicon face plate 54 and a gap 56 formed between the backing plate andthe face plate. As shown in FIG. 4A, the silicon face plate 54 and theglass backing plate 52 are placed in a face-down position on a levelingfixture 60 which is equipped with vacuum. The leveling fixture 60provides a top-reference for the assembly of the face plate 54 and thebacking plate 52 and thus assuring the top surface 64 of the face plate54 and the top surface 66 of the backing plate 52 are on exactly thesame plane. Vacuum ports (not shown) on the leveling fixture 60 arepositioned such that they contact both the face plate 54 and the backingplate 52 for holding both down securely.

As shown in FIG. 4A, the assembly of the face plate 54 and the backingplate 52 is positioned upside down such that the top surface 64 of theface plate 54 and the top surface 66 of the backing plate 52 are bothfacing toward the leveling fixture 60. The backing plate 52 is alsoprovided with an aperture 58 through its thickness for injecting aliquid polymer 62 such as a polyimide into the gap 56 formed between thetwo plates. The liquid polymer 62 is injected until it completely fillsthe gap 56 and begins to leak out along the outer edge of the gap. Thehybrid mold assembly 50 is then heated in an oven to cure the liquidpolymer and to produce a gap-filling bond which holds the silicon faceplate 54 securely in the glass backing plate 52. After the polymercuring process, the hybrid mold assembly is released from the levelingfixture 60 and excess polymer around the silicon face plate may betrimmed off by mechanical means. A present invention novel hybrid moldwhich has an absolutely planar face plate-backing plate arrangement canbe used for filling solder and preparing solder balls.

In a first alternate embodiment, as shown in FIGS. 5, 5A and 5B, ahybrid mold 70 is formed by bonding a silicon face plate 72 to aborosilicate backing plate 74 by a Mallory® bonding method. A Mallory®bonding method is a method for bonding an electrically insulatingmaterial to an electrically conductive material. In the method, a highvoltage, i.e., of approximately 1000 volts, is applied to an interfaceformed between two materials which are maintained at approximately 400°C. for producing an ionic exchange at the interface and thus forming amicro-weld. The method is also known as a thermal ionic bonding method.

Another borosilicate glass frame 80 which has a circular hole slightlylarger than the diameter of the silicon face plate and slightly thinnerthan the face plate is first positioned on the leveling fixture 78. Thehole diameter provides slight clearance 76 for the silicon face plate72. The bonded silicon face plate 72/borosilicate backing plate 74assembly is then turned upside down and placed on the leveling fixture78 in such a way that the silicon face plate 72 fits within the hole ofthe glass frame 80. This is shown in FIG. 5A. In this method, theleveling fixture 78 may be provided with a raised plateau 82 whichmatches the external dimensions of the glass frame 80 and the siliconface plate 74. This allows easy access to the peripheral edge of theassembly for the subsequent application of a liquid polymer.

A vacuum is turned on in the leveling fixture 78 to assure that the topsurface 84 of the silicon face plate 74 and the top surface 86 of theglass frame 80 are coplanar. A liquid polymer 88 is then applied aroundthe peripheral edge of the assembly to fill the small gap 76 formedbetween the thicker silicon face plate 72 and the thinner glass frame80. Capillary action assures that the polymer fills the gap all the wayaround the outer edge of the wafer. After curing, the assembly is turnedright-side up and the excess polymer around the periphery of the siliconface plate is trimmed off. This is shown in FIG. 5B. A completed hybridmold 70 having a crystalline silicon face plate 72 encased therein isthus ready for use in a molten solder screening process for forming amultiplicity of solder balls.

The hybrid molds shown in the preferred and in the first alternateembodiment utilize mechanically joined silicon face plate with aborosilicate backing plate (and frames), the resulting composite orhybrid mold plates are mechanically more durable than mold plates thatare made of either glass only or of crystalline silicon only. This is animportant feature of the present invention since the hybrid molds arenormally used in a process which subjects them to high mechanicalstresses.

In a second alternate embodiment, as shown in FIGS. 6, 6A and 6B, ahybrid mold 90 is provided in a slightly different construction. In thisembodiment, a material is utilized to extend the size of the siliconface plate to accommodate the MSS dispensing head. The material chosenis applied in a liquid state and then solidified. As shown in FIG. 6, aleveling fixture 92 equipped with vacuum is first used to hold down asilicon face plate 94. In the leveling fixture 92, there are no vacuumports in the region outside the silicon face plate 94. A frame 96 ofsquare shape and approximately 10 inches long is positioned on theleveling fixture 92 as a mold. With the silicon face plate 94 and theframe 96 in place, an extender material 98 is applied to the backside100 of the silicon face plate 94. This is shown in FIG. 6A. Suitablematerials that can be used as the extender material includesborosilicate glass and a variety of polymers. Borosilicate glass can beapplied in a molten state and solidified by cooling. In this case, thesilicon face plate 94 is preheated by heating fixture 92. This willreduce thermal shock. Polymers can be applied in a liquid state and thensolidified by curing techniques which cross-links the polymers.Depending on the adhesion of the extender material to the levelingfixture 92, it may be necessary to apply a release agent to the surfaceof the leveling fixture 92 prior to the application of the extendermaterial 98.

After solidification of the extender material, the assembly is releasedfrom the leveling fixture 92 and then turned right-side up. A presentinvention hybrid mold 90 which has an absolutely planar constructionwith the front surface 102 of the silicon face plate 94 and the topsurface 104 of the extender material 98 perfectly leveled is thusobtained. The hybrid mold 90 can be used for producing a multiplicity ofsolder balls in a molten solder screening process.

The present invention novel hybrid mold and method for manufacturinghave been amply demonstrated in the above descriptions and in theappended drawings of FIGS. 2A˜6B. Numerous benefits are achieved by thepresent invention novel hybrid molds, for instance, a better control andhigh precision of mold cavity volumes; a lower defect density than moldconstructed with only borosilicate glass; a precise centering of thereflowed solder balls in the pyramidal shaped mold cavities;significantly protruding solder balls during the reflow process whichassures bonding pad wetting; a perfect CTE match between the electronicsilicon wafer and the mold silicon face plate; a strong optical contrastbetween filled and unfilled holes enhances inspection; infra-redtransparency of mold silicon which permits visual alignment for solderball transfer; planarity of the hybrid molds constructed by utilizingtop referencing; and the mechanical durability of the hybrid molds whencompared to a glass-only or a silicon-only mold plate.

While the present invention has been described in an illustrativemanner, it should be understood that the terminology used is intended tobe in a nature of words of description rather than a limitation.

Furthermore, while the present invention has been described in terms ofa preferred and two alternate embodiments, it is to be appreciated thatthose skilled in the art will readily apply these teachings to otherpossible variations of the inventions.

The embodiment of the invention in which an exclusive property orprivilege is claimed are defined as follows:
 1. A hybrid mold for amultiplicity of solder balls comprising: a crystalline silicon faceplate having a substantially parallel front surface and back surface, amultiplicity of pyramidal-shaped cavities formed along acrystallographic orientation in said front surface of the face plate,and a backing plate having a top surface and a bottom surface, said topsurface having a recess formed therein for receiving said face plate byadhesive means such that said front surface of the face plate and saidtop surface of the backing plate are substantially coplanar.
 2. A hybridmold for a multiplicity of solder balls according to claim 1, whereinsaid multiplicity of cavities for forming solder balls are formed alonga preselected crystallographic orientation of <100>.
 3. A hybrid moldfor a multiplicity of solder balls according to claim 1, wherein saidrecess in said top surface of the backing plate having an area and adepth sufficiently large for receiving said face plate.
 4. A hybrid moldfor a multiplicity of solder balls according to claim 1, wherein saidrecess in said top surface of the backing plate having an area and adepth sufficiently large for receiving said face plate such that saidfront surface of the face plate and said top surface of the backingplate are coplanar when said face plate is bonded to said recess by anadhesive layer.
 5. A hybrid mold for a multiplicity of solder ballsaccording to claim 1, wherein said backing plate is formed of a materialthat has a rigidity and coefficient of thermal expansion substantiallysimilar to those for crystalline silicon.
 6. A hybrid mold for amultiplicity of solder balls according to claim 1, wherein said backingplate is formed of borosilicate glass.
 7. A hybrid mold for amultiplicity of solder balls comprising: a crystalline silicon faceplate having a first diameter and a multiplicity of cavities formed in afront surface, a backing plate having a top surface bonded to a backsurface of said face plate, said backing plate having a length and awidth larger than said first diameter of the face plate, a frame memberhaving substantially the same length and width as the backing plate andan aperture having a second diameter larger than said first diameter ofthe face plate, and an adhesive circumferentially bonding said framemember to said face plate such that a top surface of the frame memberbeing coplanar with said front surface of the face plate.
 8. A hybridmold for a multiplicity of solder balls according to claim 7 furthercomprising an adhesive layer between a bottom surface of said framemember and a top surface of said backing plate.
 9. A hybrid mold for amultiplicity of solder balls according to claim 7, wherein said framemember and said backing plate are formed substantially of the samematerial.
 10. A hybrid mold for a multiplicity of solder balls accordingto claim 7, wherein said frame member and said backing plate are formedof a material having a rigidity substantially similar to the rigidity ofcrystalline silicon.
 11. A hybrid mold for a multiplicity of solderballs according to claim 7, wherein said frame member and said backingplate are formed of a material having a coefficient of thermal expansionwithin 50% of that for the crystalline silicon.
 12. A hybrid mold for amultiplicity of solder balls according to claim 7, wherein a thermalionic bond exits between the top surface of the backing plate and theback surface of the face plate.
 13. A hybrid mold for a multiplicity ofsolder balls according to claim 7, wherein said multiplicity of cavitiesare formed in said crystalline silicon along a crystallographicorientation of <100>.
 14. A hybrid mold for a multiplicity of solderballs according to claim 7, wherein each of said multiplicity ofcavities are formed in a pyramidal shape.
 15. A hybrid mold for amultiplicity of solder balls comprising: a crystalline silicon faceplate having a multiplicity of pyramidal-shaped cavities formed along acrystallographic orientation in a front surface, and a backing plateencasing said face plate and with said front surface of the face plateexposed on a top surface of the backing plate being substantiallycoplanar with said front surface of the face plate.
 16. A hybrid moldfor a multiplicity of solder balls according to claim 15, wherein saidbacking plate being formed of a material that has a rigiditysubstantially similar to that of the crystalline silicon.
 17. A hybridmold for a multiplicity of solder balls according to claim 15, whereinsaid backing plate being formed of a material that has a coefficient ofthermal expansion substantially similar to that of the crystallinesilicon.
 18. A hybrid mold for a multiplicity of solder balls accordingto claim 15, wherein said multiplicity of cavities are formed in saidcrystalline silicon along a crystallographic orientation of <100>.
 19. Ahybrid mold for a multiplicity of solder balls according to claim 15,wherein said backing plate is formed of borosilicate glass.
 20. A hybridmold for a multiplicity of solder balls according to claim 15, whereinsaid backing plate is formed of a polymeric material.
 21. A method forpreparing a hybrid mold for a multiplicity of solder balls comprisingthe steps of: providing a crystalline silicon face plate having asubstantially parallel front surface and back surface, etching amultiplicity of cavities for forming solder balls in said front surfaceof the face plate, providing a backing plate having a top surface and abottom surface, said top surface having a recess formed therein, andbonding said back surface of the face plate into the recess such thatsaid front surface of the face plate and said top surface of the backingplate are substantially coplanar.
 22. A method for preparing a hybridmold for a multiplicity of solder balls according to claim 21 furthercomprising the step of forming said multiplicity of cavities in saidfront surface of the face plate along a preselected crystallographicorientation of <100>.
 23. A method for preparing a hybrid mold for amultiplicity of solder balls according to claim 21 further comprisingthe step of etching said multiplicity of cavities in a pyramidal shape.24. A method for preparing a hybrid mold for a multiplicity of solderballs according to claim 21 further comprising step of providing saidrecess in the top surface of the backing plate with an area and a depthsufficient for receiving said face plate.
 25. A method for preparing ahybrid mold for a multiplicity of solder balls according to claim 21further comprising the step of forming said backing plate with amaterial that has a rigidity and coefficient of thermal expansionsubstantially similar to those for crystalline silicon.
 26. A method forpreparing a hybrid mold for a multiplicity of solder balls according toclaim 21 further comprising the step of forming said backing plate withborosilicate glass.
 27. A method for preparing a hybrid mold for amultiplicity of solder balls comprising the steps of: providing acrystalline silicon face plate having a first diameter and amultiplicity of cavities formed in a front surface, providing a backingplate having a top surface bonded to a back surface of said face plate,said backing plate having a length and a width larger than said firstdiameter of said face plate, providing a frame member havingsubstantially the same length and width as the backing plate and anaperture having a second diameter larger than said first diameter of theface plate, and bonding an outer peripheral surface of said face plateto an inner peripheral surface of said frame member by an adhesive meanssuch that a top surface of the frame member is coplanar with the frontsurface of the face plate.
 28. A method for preparing a hybrid mold fora multiplicity of solder balls according to claim 27 further comprisingthe step of adhesively bonding a bottom surface of the frame member to atop surface of the backing plate.
 29. A method for preparing a hybridmold for a multiplicity of solder balls according to claim 27 furthercomprising the step of forming said frame member and said backing platewith substantially the same ceramic material.
 30. A method for preparinga hybrid mold for a multiplicity of solder balls according to claim 27further comprising the step of forming said frame member and saidbacking plate with a material having a rigidity and coefficient ofthermal expansion substantially similar to those of crystalline silicon.31. A method for preparing a hybrid mold for a multiplicity of solderballs according to claim 27 further comprising the step of forming saidframe member and said backing plate with a material having a coefficientof thermal expansion within 50% of that for the crystalline silicon. 32.A method for preparing a hybrid mold for a multiplicity of solder ballsaccording to claim 27 further comprising the step of bonding the topsurface of the backing plate and the back surface of the face plate by athermal ionic bonding method.
 33. A method for preparing a hybrid moldfor a multiplicity of solder balls according to claim 27 furthercomprising the step of etching a multiplicity of cavities in the frontsurface of the crystalline silicon face plate along a crystallographicorientation of <100>.
 34. A method for preparing a hybrid mold for amultiplicity of solder balls according to claim 27 further comprisingthe step of etching said multiplicity of cavities in the front surfaceof the crystalline silicon face plate in a pyramidal shape.
 35. A methodfor preparing a hybrid mold for a multiplicity of solder ballscomprising the steps of: providing a crystalline silicon face platehaving a front surface and a back surface, etching a multiplicity ofcavities for said solder balls in the front surface, and encasing saidface plate with a liquid material forming a backing plate with saidfront surface of the face plate exposed and a top surface of the backingplate substantially coplanar with the front surface of the face plate.36. A method for preparing a hybrid mold for a multiplicity of solderballs according to claim 35 further comprising the step of forming saidbacking plate with a material that has a rigidity after solidifyingsubstantially similar to that of the crystalline silicon.
 37. A methodfor preparing a hybrid mold for a multiplicity of solder balls accordingto claim 35 further comprising the step of forming said backing platewith a material that has a coefficient of thermal expansion aftersolidifying substantially similar to that of the crystalline silicon.38. A method for preparing a hybrid mold for a multiplicity of solderballs according to claim 35 further comprising the step of etching saidmultiplicity of cavities in the crystalline silicon along acrystallographic orientation of <100>.
 39. A method for preparing ahybrid mold for a multiplicity of cavities according to claim 35 furthercomprising the step of forming said backing plate with borosilicateglass.
 40. A method for preparing a hybrid mold for a multiplicity ofsolder balls according to claim 35 further comprising the step offorming said backing plate with a polymeric material.